Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

Symposium G, 'Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II', was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California. Achieving high reliability is a key issue for semiconductor optical and electrical devices [...]
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Symposium G, 'Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II', was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California. Achieving high reliability is a key issue for semiconductor optical and electrical devices and is as important as device performance for commercial application. Degradation of both optical and electrical devices is strongly related to the materials issues. A variety of material defects can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallisation, bonding, packaging, etc. This symposium presented state-of-the-art results on reliability and degradation of various semiconductor optical and electrical devices as well as their materials issues in thin-film growth, wafer processing and device fabrication processes.